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FDD5202P
February 1999 PRELIMINARY
FDD5202P
P-Channel, Logic Level, MOSFET
General Description
This P-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Features * * *
-8 A, -60 V. RDS(on) = 0.3 @ VGS = -10 V RDS(on) = 0.5 @ VGS = -4.5 V. Low gate charge (15.5nC typical). Fast switching speed.
Applications * * *
DC/DC converter Motor drives L.D.O.
S
D G S
TO-252 Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation @ TC = 25oC TA = 25oC T A = 25oC TJ, Tstg
(Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a)
G
D
TA=25 C unless otherwise noted
o
Parameter
Ratings
-60 20 -8 -2.3 -15 39 2.8 1.3 -55 to +150
Units
V V A
W
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1b)
3.2 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD5202P
(c)1999 Fairchild Semiconductor Corporation
Device FDD5202P
Reel Size 13''
Tape width 16mm
Quantity 2500
FDD5202P, Rev. A
FDD5202P
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -48 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
Typ
Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
-60 -60 -1 100 -100
V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -2.3 A VGS = -10 V, ID = -2.3 A,TJ=125C VGS = -4.5 V, ID = -1.8 A VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -2.3 A
-2
-2.3 3.2 0.205 0.340 0.313
-4
V mV/C
0.300 0.510 0.500
ID(on) gFS
-10 3
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -30 V, VGS = 0 V, f = 1.0 MHz
560 130 35
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6
8 20 20 5
15 40 40 20 22
ns ns ns ns nC nC nC
VDS = -30 V, ID = -2.3 A, VGS = -10 V
15.5 2.4 4.7
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.2 A
(Note 2)
-2.2 -1 -1.3
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RJA is determined by the user's board design.
a) RJA= 45oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W when mounted on a 0.076 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDD5202P, Rev. A
FDD5202P
Typical Characteristics
15 VGS = -10V -ID, DRAIN CURRENT (A) 12 -7.0V -6V 9
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -6.0V -7.0V -8.0V -10V -5.0V VGS = -4.5V
6
-5.0V -4.5V
3 -4.0V 0 0 2 4 6 8 10
0
3
6
9
12
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.8 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = -2.3A VGS = -10V
ID = -1.5A 0.6
0.4
TA = 125 C
o
0.2
TA = 25 C
o
0 125 150 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VDS = -5V -ID, DRAIN CURRENT (A) 8 TA = -55 C 25 C
o
100
125 C
o
-IS, REVERSE DRAIN CURRENT (A)
o
VGS = 0V 10 1 0.1 0.01 0.001 0.0001
o
TA = 125 C 25 C -55 C
o o
6
4
2
0 0 2 4 6 8
0
0.4
0.8
1.2
1.6
2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD5202P, Rev. A
FDD5202P
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.3A 8 VDS = -10V
(continued)
900 -20V CAPACITANCE (pF) -30V 800 700 CISS 600 500 400 300 200 100 COSS CRSS 0 10 20 30 40 50 f = 1MHz VGS = 0 V
6
4
2
0 0 4 8 12 16 20
0
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
60 SINGLE PULSE
o
-ID, DRAIN CURRENT (A)
10 RDS(ON) LIMIT 1 10S 0.1 VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0.1 1 10
o o
1ms 10ms 100ms 1S DC
RJA = 96 C/W TA = 25 C POWER (W) 40
o
20
0
100
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96C/W
0.02 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD5202P, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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